Plasma etching has become one of the most important techniques in IC fabrication. It plays a
critical role in creating geometries of extremely small size for highly integrated devices. Plasma etching
techniques utilize plasma created from appropriate gas mixtures and RF excitation to remove surface
material physically or chemically (or both) from a substrate. Plasma etching can be categorized by the
material as metal etching, silicon etching and dielectric etching, or it can be categorized by the
technology as electron cyclotron resonance (ECR), reactive ion etching (RIE) or inductively coupled
ion (ICP).
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