Temperature Compensated MEMS Reference Oscillators with Sub-PPM Instability - Roozbeh Tabrizian

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Silicon MEMS oscillators provide several advantages over their quartz crystal counterparts including on-chip integration, small form factor and low phase noise resulted from high Q of the microresonator. However, silicon resonators exhibit a native temperature coefficient of frequency (TCF) of ~ -30 ppm/°C, which causes an overall drift of ~ 3,750 ppm over the temperature range of -40°C to 85°C. This makes electronic temperature compensation challenging especially for TCXO applications which require sub–ppm stability over the entire temperature range. In this talk, I introduce a novel passive compensation technique for silicon bulk acoustic wave (BAW) resonators using an embedded array of SiO2 pillars. Being applicable to thick silicon substrates, this method realizes full compensation of the linear temperature-induced frequency drift of the BAW devices that exhibit high Q in air with superior power handling, which enables the implementation of reference oscillators with excellent PN performance across a wide temperature range.
https://mediaspace.gatech.edu/media/tabrizian/1_4ex27e0c

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Temperature Compensated MEMS Reference Oscillators with Sub-PPM Instability - Roozbeh Tabrizian

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