Polymeric semiconductors are promising materials for the commercialization of large‐area, low‐cost and flexible
electronics. Their electrical properties are extremely sensitive to structure at multiple length scales, and process
modifications can impact calculated hole mobilities by up to four orders of magnitude. For the readily available
semiconducting polymer, poly(3‐hexylthiophene) (P3HT), various microstructural features that correlate well with hole mobility have been
identified. These include paracrystalline disorder, exciton bandwidth, polymer molecular weight, orientation of
crystalline domains, and inter‐grain connectivity. Here, a set of general, robust analysis algorithms will be presented that
can be used to statistically quantify two‐dimensional order in microstructures of P3HT‐based OFET devices. Application
of these analytical techniques to a variety of shear‐based processing methods indicate that shear‐driven alignment of
P3HT fibers can effect substantial improvements in macroscale mobility.
https://mediaspace.gatech.edu/media/reichmanis/1_9ml94wae
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